![]() ![]() It was found that the TaN diffusion barrier can be scaled to below 2nm while maintaining excellent Cu diffusion barrier properties.įor Cu linewidths down to 15–12nm, imec also modeled the impact of the interconnect line-edge roughness on the system-level performance. To meet reliability requirements, one option is to use Cu in combination with thin diffusion barriers such as tantalum nitride (TaN)) and liners such as Co or Ru. To set the limits of scaling, imec has benchmarked the resistance of Cu with respect to Co and Ru in a damascene vehicle with scaled dimensions, demonstrating that Cu still outperforms Co for wire cross sections down to 300nm 2 (or linewidths of 12nm), which corresponds to the 3nm technology node. Anritsu Adds Tools to VNA Families that Improve Signal Integrity Testing Capability
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